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NTB23N03R
Power MOSFET
23 Amps, 25 Volts
N-Channel D 2 PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? Pb-Free Packages are Available
Typical Applications
http://onsemi.com
23 AMPERES, 25 VOLTS
R DS(on) = 32 m W (Typ)
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C iss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
G
N-CHANNEL
D
High-Efficiency DC-DC Converters
S
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Symbol
V DSS
V GS
Value
25
± 20
Unit
Vdc
Vdc
MARKING DIAGRAM
& PIN ASSIGNMENTS
Drain Current
- Continuous @ T A = 25 ° C, Limited by Chip
- Continuous @ T A = 25 ° C, Limited by Package
- Single Pulse (t p = 10 m s)
Total Power Dissipation @ T A = 25 ° C
I D
I D
I DM
P D
23
6.0
60
37.5
A
W
1
2
3
4
4 Drain
N TB
23N03G
AYWW
Operating and Storage Temperature Range
Thermal Resistance - Junction-to-Case
T J , T stg
R q JC
-55 to
150
3.3
° C
° C/W
D 2 PAK
CASE 418B
STYLE 2
1
Gate
2
Drain
3
Source
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTB23N03 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 3
1
Publication Order Number:
NTB23N03R/D
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